Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.4933201
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2. Epitaxial Growth of Semiconductor Quantum Dots: An Overview;Journal of Molecular and Engineering Materials;2023-06-30
3. Plastic Relaxation of Stressed Semipolar AlN($$10\bar {1}1$$) Layer Synthesized on a Nanopatterned Si(100) Substrate;Technical Physics;2020-12
4. Semipolar ( $$ 1\bar{1}01 $$ 1 1 ¯ 01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate;Journal of Materials Science;2019-02-25
5. Structural defects of GaN deposited on (111) Si with Gd2O3-related buffer layers;J VAC SCI TECHNOL A;2017
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