TEM study of the two‐step annealing of arsenic‐implanted 〈100〉 silicon
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.569945
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Boron diffusion in silicon: the anomalies and control by point defect engineering;Materials Science and Engineering: R: Reports;2003-11
2. The point defect engineering approaches for ultra-shallow boron junction formation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05
3. Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. Ion Implantation and Rapid Thermal Annealing in Synergy for Shallow Junction Formation;Physica Status Solidi (a);1996-11-16
5. Enhancement of electrical activation of ion‐implanted phosphorus in Si(100) through two‐step thermal annealing;Applied Physics Letters;1993-08-23
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