Effect of N+2 ion bombardment on the compositional change and residual stress of AlN film synthesized by ion beam assisted deposition-Reference-Cited by-同舟云学术

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Effect of N+2 ion bombardment on the compositional change and residual stress of AlN film synthesized by ion beam assisted deposition

Published:1995-11 Issue:6 Volume:13 Page:2814-2818
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim Ig‐Hyeon,Kim Seon‐Hyo

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579710

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Bombardment Effects on Internal Stress of Ni Thin Film during Sputter Deposition Process;Journal of the Japan Institute of Metals and Materials;2014

2. Aluminum nitride piezo-acousto-photonic crystal nanocavity with high quality factors;Applied Physics Letters;2013-04-15

3. Ar, Xe Ion Bombardment Effects on Film Characteristics of Ni Thin Film during Sputter Deposition Process;Journal of the Japan Institute of Metals;2012

4. Role of Charged Species on the Growth of GaN Films by Modified Activated Reactive Evaporation;Electrochemical and Solid-State Letters;2011

5. Low-temperature growth of polycrystalline GaN films using modified activated reactive evaporation;Journal of Crystal Growth;2009-04

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