Influence of the development process on ultimate resolution electron beam lithography, using ultrathin hydrogen silsesquioxane resist layers-Reference-Cited by-同舟云学术

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Influence of the development process on ultimate resolution electron beam lithography, using ultrathin hydrogen silsesquioxane resist layers

Published:2007 Issue:6 Volume:25 Page:1998
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Grigorescu Anda E.,van der Krogt Marco C.,Hagen Cees W.,Kruit Pieter

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron Beam Lithography;Nanofabrication;2024

2. Synergy of cold development and electron-beam exposure for Si nanotip patterning in quantum-electronic devices;Journal of Vacuum Science & Technology B;2023-08-18

3. Medusa 82—Hydrogen silsesquioxane based high sensitivity negative-tone resist with long shelf-life and grayscale lithography capability;Journal of Vacuum Science & Technology B;2021-01

4. Resists for Helium Ion Beam Lithography: Recent Advances;ACS Applied Electronic Materials;2020-11-24

5. Process study and the lithographic performance of commercially available silsesquioxane based electron sensitive resist Medusa 82;Micro and Nano Engineering;2020-08

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