Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas-Reference-Cited by-同舟云学术

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Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas

Published:2001-01 Issue:1 Volume:19 Page:25-30
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kastenmeier B. E. E.,Matsuo P. J.,Oehrlein G. S.,Ellefson R. E.,Frees L. C.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1329118

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Spectral clustering algorithm for real‐time endpoint detection of silicon nitride plasma etching;Plasma Processes and Polymers;2023-03-22

3. Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si3N4 and Si etching;Journal of Vacuum Science & Technology A;2020-05

4. Controlled gradual and local thinning of free-standing nanometer thick Si3N4 films using reactive ion etch;Microsystem Technologies;2019-10-31

5. 69‐1: Etch Properties of Silicon Nitride Films Using a New In‐Line Equipment with Atmospheric Glow Plasma for the OLED Flexible Display;SID Symposium Digest of Technical Papers;2019-05-29

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