Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance-Reference-Cited by-同舟云学术

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Published:2014-01 Issue:1 Volume:32 Page:011216
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Chiu Yu-Sheng,Lin Tai-Ming,Nguyen Hong-Quan,Weng Yu-Chen,Nguyen Chi-Lang,Lin Yueh-Chin,Yu Hung-Wei,Yi Chang Edward,Lee Ching-Ting

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4862165

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-resistance TiAl3/Au ohmic contact and enhanced performance on AlGaN/GaN HEMT;Applied Surface Science;2024-08

2. Low Specific Contact Resistivity of 10⁻³Ω·cm² for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate;IEEE Transactions on Electron Devices;2022-10

3. Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs;Semiconductor Science and Technology;2022-06-21

4. A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications;ACS Applied Electronic Materials;2022-06-06

5. Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact;IEEE Transactions on Electron Devices;2021-10