Ordering and surface state reduction of GaAs (100) by low energy S+ bombardment
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.1427888
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Formation of arsenic sulfide on GaAs surface under illumination in acidified thiourea electrolytes;Applied Surface Science;2011-10
2. Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound;Applied Surface Science;2009-10
3. Study of S+ ion-assisted sulfurization of n-GaAs (100) surface;Applied Surface Science;2008-10
4. AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment;Applied Surface Science;2008-04
5. Structural and electrical analysis of S+ ion bombarded p-InP(100);Applied Surface Science;2006-11
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