Oxygen incorporation and charge donor activation via subplantation during growth of indium tin oxide films-Reference-Cited by-同舟云学术

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Oxygen incorporation and charge donor activation via subplantation during growth of indium tin oxide films

Published:2009-03 Issue:2 Volume:27 Page:362-366
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Amassian A.,Dudek M.,Zabeida O.,Gujrathi S. C.,Klemberg-Sapieha J. E.,Martinu L.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3081970

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasmas and acoustic waves to pattern the nanostructure and chemistry of thin films;Acta Materialia;2023-08

2. The Microstructure, Resistivity and Infrared Emissivity of ITO Film with O/Ar Ratio Variation in Al₂O₃ Buffer Layer;Materials Science Forum;2011-06

3. Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering;Journal of Electronic Materials;2010-07-27

4. Ion bombardment-induced enhancement of the properties of indium tin oxide films prepared by plasma-assisted reactive magnetron sputtering;Thin Solid Films;2009-06

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