Impact of ultrathin Al2O3 interlayers on resistive switching in TiOx thin films deposited by atomic layer deposition-Reference-Cited by-同舟云学术

Impact of ultrathin Al2O3 interlayers on resistive switching in TiOx thin films deposited by atomic layer deposition

Published:2017-07 Issue:4 Volume:35 Page:041001
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Liu Weixia¹,Gao Leiwen¹,Xu Kewei²,Ma Fei¹

Affiliation:

1. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China

2. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China and Department of Physics and Opt-electronic Engineering, Xi'an University of Arts and Science, Xi'an 710065, Shaanxi, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4985053

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