Effect of alloy disorder on deep levels in Hg1−xCdxTe-Reference-Cited by-同舟云学术

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Effect of alloy disorder on deep levels in Hg1−xCdxTe

Published:1986-07 Issue:4 Volume:4 Page:2195-2199
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Myles Charles W.,Ford William C.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574055

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of lattice relaxation on deep levels in semiconductors;Physical Review B;1991-01-15

2. Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs1−xPx;Journal of Applied Physics;1990-06-15

3. Effect of alloy disorder on the deep levels produced by the anion vacancy inGaAs1−xPx;Physical Review B;1989-12-15

4. Deep levels associated with triplet impurity complexes in GaP;Physical Review B;1989-11-15

5. Chemical trends for deep levels associated with vacancy-impurity complexes in semiconductors;Physical Review B;1989-09-15

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