Photoluminescence characterization of molecular beam epitaxy grown InxGa1−xAs(0.51<x<0.57)-Reference-Cited by-同舟云学术

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Photoluminescence characterization of molecular beam epitaxy grown InxGa1−xAs(0.51

Published:1985-11 Issue:6 Volume:3 Page:1631
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Swaminathan V.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence;physica status solidi (b);2023-05-20

2. High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1999-04-15

3. Control of chemical composition and band gap energy in Ga In1 − − Al As on InP during molecular beam epitaxy;Journal of Crystal Growth;1997-05

4. Effects of band offset and nonparabolicity on the effective mass of two-dimensional electron gases in modulation-δ-dopedGa0.47In0.53As-based heterostructures;Physical Review B;1997-02-15

5. Observation of double cyclotron resonance in modulation‐δ‐doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection;Applied Physics Letters;1996-02-19

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