Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures-Reference-Cited by-同舟云学术

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Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures

Published:2013-01 Issue:1 Volume:31 Page:01A128
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Beldarrain Oihane,Duch Marta,Zabala Miguel,Rafí Joan Marc,González Mireia Bargalló,Campabadal Francesca

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4768170

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative piezoelectric measurements of partially released Pb(Zr, Ti)O3 structures;Journal of Applied Physics;2024-09-03

2. Exploring Al2O3 blister evolution through cathodoluminescence and attenuated total reflectance infrared analyses;Journal of Vacuum Science & Technology A;2023-12-29

3. Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention;ACS Applied Materials & Interfaces;2021-12-27

4. Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth;Journal of Vacuum Science & Technology A;2021-12

5. Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3;Journal of Vacuum Science & Technology B;2021-12

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