High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation-Reference-Cited by-同舟云学术

High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation

Published:2022-02-07 Issue:1 Volume:29 Page:014007
ISSN:1055-5269
Container-title:Surface Science Spectra
language:en
Short-container-title:Surf. Sci. Spectra

Author:

Deleuze Pierre-Marie¹^ORCID,Artyushkova Kateryna²^ORCID,Martinez Eugénie¹,Renault Olivier¹^ORCID

Affiliation:

1. Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

2. Physical Electronics, 18725 Lake Drive East, Chanhassen, Minnesota 55317

Funder

Agence Nationale de la Recherche

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference5 articles.

1. Dirac–Fock photoionization parameters for HAXPES applications

2. Dirac–Fock photoionization parameters for HAXPES applications, Part II: Inner atomic shells

3. X-ray photoelectron spectroscopy using hard X-rays

4. ISO 18118:2015, Surface Chemical Analysis—Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy—Guide to the Use of Experimentally Determined Relative Sensitivity Factors for the Quantitative Analysis of Homogeneous Materials (International Organization for Standardization, Geneva, Switzerland, 2015).

5. See the supplementary material at https://doi.org/10.1116/6.0001513 for the raw spectrum data and the analyzer calibration spectra.

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