High performance InP high electron mobility transistors by valved phosphorus cracker-Reference-Cited by-同舟云学术

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High performance InP high electron mobility transistors by valved phosphorus cracker

Published:2000 Issue:3 Volume:18 Page:1642
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chin T. P.,Chen Y. C.,Barsky M.,Wojtowicz M.,Grundbacher R.,Lai R.,Streit D. C.,Block T. R.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems;Applied Physics Reviews;2024-08-19

2. Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT’s;International Journal of Nanoscience;2020-12-10

3. Simulation of Ultrasubmicrometer-Gate $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator;IEEE Transactions on Electron Devices;2007-09

4. Molecular beam epitaxy-grown AlGaInAs∕InP distributed Bragg reflectors for 1.55 [micro sign]m VCSELs;Electronics Letters;2002

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