Molecular beam epitaxy-grown AlGaInAs∕InP distributed Bragg reflectors for 1.55 [micro sign]m VCSELs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020796?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C
2. Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL
3. Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP
4. 88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers
5. Improved electrical and thermal properties of InP-AlGaAsSb Bragg mirrors for long-wavelength vertical-cavity lasers
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1. 134 μm VECSEL mode-locked with a GaSb-based SESAM;Optics Letters;2018-07-11
2. Utilizing electromagnetically induced transparency in InAs quantum dots for all-optical transistor design;Applied Optics;2017-09-28
3. Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed Bragg reflectors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05
4. A microelectromechanically tunable asymmetric Fabry-Perot quantum well modulator at 1.55 µm;Optics Express;2008-10-07
5. Cubic GaN∕AlN multiple quantum well photodetector;Applied Physics Letters;2008-05-19
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