Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy

Published:2000 Issue:3 Volume:18 Page:1448
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lee Kyeong K.,Doolittle William A.,Brown April S.,May Gary S.,Stock Stuart R.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal Organic Vapor Phase Growth of Complex Semiconductor Alloys;AIP Conference Proceedings;2010

2. Optimization of the active region of InGaN∕GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005

3. A comparative study of surface reconstruction of wurtzite GaN on (0001) sapphire by RF plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2001-09

4. Response surface modeling of the composition of AlAsySb1−y alloys grown by molecular beam epitaxy;Journal of Crystal Growth;2001-05

5. Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth;Applied Physics Letters;2001-02-12

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