Evolution of Si-on-GaAs (001) surface morphology towards self-organized ordered Si structures-Reference-Cited by-同舟云学术

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Evolution of Si-on-GaAs (001) surface morphology towards self-organized ordered Si structures

Published:2000 Issue:4 Volume:18 Page:2204
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wang Z. M.,Däweritz L.,Schützendübe P.,Ploog K. H.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs;Journal of Crystal Growth;2014-04

2. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As HEMT nanoheterostructures;Semiconductors;2014-01

3. Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations;Semiconductors;2013-07

4. Morphology evolution during strained (In,Ga)As epitaxial growth on GaAs vicinal (100) surfaces;Applied Physics Letters;2003-09

5. Surface dynamics during phase transitions of GaAs(100);Physical Review B;2003-03-31

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