ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al[sub 2]O[sub 3]-Reference-Cited by-同舟云学术

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ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al[sub 2]O[sub 3]

Published:2000 Issue:4 Volume:18 Page:2313
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hong S. K.,Ko H. J.,Chen Y.,Hanada T.,Yao T.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Deep levels in the MBE ZnO:As/n-GaN diodes – Photoluminescence, electrical properties and deep level transient spectroscopy;Journal of Alloys and Compounds;2018-04

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