In-gap states in titanium dioxide and oxynitride atomic layer deposited films-Reference-Cited by-同舟云学术

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In-gap states in titanium dioxide and oxynitride atomic layer deposited films

Published:2017-01 Issue:1 Volume:35 Page:01B135
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Henkel Karsten,Das Chittaranjan,Kot Małgorzata,Schmeißer Dieter,Naumann Franziska,Kärkkänen Irina,Gargouri Hassan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4972247

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unraveling the Role of Perovskite in Buried Interface Passivation;ACS Applied Materials & Interfaces;2023-11-22

2. Tunable Ti³⁺-Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO₂;The Journal of Physical Chemistry C;2022-02-25

3. Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma;Journal of Vacuum Science & Technology A;2021-12

4. Top‐Down Approach to Study Chemical and Electronic Properties of Perovskite Solar Cells: Sputtered Depth Profiling Versus Tapered Cross‐Sectional Photoelectron Spectroscopies;Solar RRL;2021-08-19

5. Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication;Advanced Materials Interfaces;2021-05-06

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