Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. II. Coupling reactor and feature scale models

Author:

Hsu Cheng-Che1,Hoang John1,Le Vu1,Chang Jane P.1

Affiliation:

1. Department of Chemical and Biomolecular Engineering, UCLA, Los Angeles, California 90095

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Plasma processing for advanced microelectronics beyond CMOS;Journal of Applied Physics;2021-08-28

2. A model-based, Bayesian approach to the CF4/Ar etch of SiO2;Design-Process-Technology Co-optimization for Manufacturability XII;2018-03-20

3. Faraday cage angled-etching of nanostructures in bulk dielectrics;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07

4. Rapid recipe formulation for plasma etching of new materials;SPIE Proceedings;2016-03-16

5. Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond;Journal of Physics D: Applied Physics;2015-01-29

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