A model-based, Bayesian approach to the CF4/Ar etch of SiO2-Reference-Cited by-同舟云学术

A model-based, Bayesian approach to the CF4/Ar etch of SiO2

Published:2018-03-20 Issue: Volume: Page:
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Container-title:Design-Process-Technology Co-optimization for Manufacturability XII
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Author:

Chopra Meghali J.,Zhu Xilan,Zhang Zizhuo Z.,Helpert Sofia,Verma Rahul,Bonnecaze Roger

Publisher

SPIE

Reference22 articles.

1. R. Lawes, [MEMS Cost Analysis: From Laboratory to Industry] CRC Press, Boa Raton, FL(2014).

2. Global model of Ar, O2, Cl2, and Ar/O2 high‐density plasma discharges

3. Global models of pulse-power-modulated high-density, low-pressure discharges

4. S. Kim, [An Improved Global Model for Electronegative Discharge and Ignition Conditions for Peripheral Plasma Connected to a Capacitive Discharge] University of California at Berkeley, University of California at Berkeley(2006).

5. Spatially Averaged (Global) Model of Time Modulated High Density Chlorine Plasmas

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