Growth and microstructure of self-assembled ErAs islands in GaAs
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Room Temperature NUV‐To‐NIR Up‐ and Down‐Conversion Photoluminescence in Erbium‐Doped GaAs;Advanced Optical Materials;2023-11-20
2. 1550 nm Compatible Ultrafast Photoconductive Material Based on a GaAs/ErAs/GaAs Heterostructure;Advanced Optical Materials;2021-04-25
3. Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation;Journal of Vacuum Science & Technology A;2021-03
4. Mechanism for embedded in-plane self-assembled nanowire formation;Physical Review Materials;2020-06-17
5. Improved epitaxial growth of TbAs film on III–V semiconductors;Journal of Vacuum Science & Technology A;2020-05
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