Growth mechanism of 3C–SiC(111) films on Si using tetramethylsilane by rapid thermal chemical vapor deposition
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.580538
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2. Thermodynamic design of a high temperature chemical vapor deposition process to synthesize α-SiC in Si-C-H and Si-C-H-Cl systems;Journal of Crystal Growth;2018-03
3. Mechanism of the thermal decomposition of tetramethylsilane: a flash pyrolysis vacuum ultraviolet photoionization time-of-flight mass spectrometry and density functional theory study;Physical Chemistry Chemical Physics;2018
4. Kinetics of the thermal decomposition of tetramethylsilane behind the reflected shock waves between 1058 and 1194 K;Journal of Chemical Sciences;2016-02-13
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