Operating high-density plasma sources in a low-density range: Applications to metal etch processes
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.581998
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dry-etching properties of TiN for metal/high-k gate stack using BCl3-based inductively coupled plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-11
2. Effects of impedance matching network on the discharge mode transitions in a radio-frequency inductively coupled plasma;Physics of Plasmas;2008-06
3. Effects of Volatility of Etch By-products on Surface Roughness During Etching of Metal Gates in Cl[sub 2];Journal of The Electrochemical Society;2008
4. Experimental studies on the properties of the discharge modes in a cylindrical radio frequency inductively coupled plasma;Acta Physica Sinica;2008
5. InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides;Materials Science in Semiconductor Processing;2006-02
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