Patterning tungsten films with an electron beam lithography system at 50 keV for x-ray mask applications-Reference-Cited by-同舟云学术

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Patterning tungsten films with an electron beam lithography system at 50 keV for x-ray mask applications

Published:1991-11 Issue:6 Volume:9 Page:3292
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Rhee K. W.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of an Al2O3 interlayer on linewidth control in electron beam writing on tungsten substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05

2. Electron beam-induced deposition of tungsten;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09

3. Reactive ion etching of high‐aspect‐ratio 100 nm linewidth features in tungsten;Applied Physics Letters;1994-04-18

4. Study of electron beam patterning of resist on tungsten x-ray masks;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11

5. Reduction and elimination of proximity effects;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11

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