Impact of etching kinetics on the roughening of thermal SiO2 and low-k dielectric coral films in fluorocarbon plasmas
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.2748797
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching;Journal of Vacuum Science & Technology A;2020-09
2. Formation mechanism of sidewall striation in high-aspect-ratio hole etching;Japanese Journal of Applied Physics;2019-05-17
3. Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection;Journal of Applied Physics;2018-10-14
4. Ripple formation on Si surfaces during plasma etching in Cl2;AIP Advances;2018-05
5. Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation;Journal of Physics D: Applied Physics;2017-09-15
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