CoSix contact resistance after etching and ashing plasma exposure-Reference-Cited by-同舟云学术

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CoSix contact resistance after etching and ashing plasma exposure

Published:2009-07 Issue:4 Volume:27 Page:844-848
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Katahira Ken,Fukasawa Masanaga,Kobayashi Shoji,Takizawa Toshifumi,Isobe Michio,Hamaguchi Satoshi,Nagahata Kazunori,Tatsumi Tetsuya

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3130146

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications;Japanese Journal of Applied Physics;2024-08-01

3. Radical, Ion, and Photon's Effects on Defect Generation At Sio2/Si Interface During Plasma Etching;2024

4. Quantitative control of plasma and surface reactions for dielectric film etching;Japanese Journal of Applied Physics;2022-01-01

5. Reduction in photon-induced interface defects by optimal pulse repetition rate in the pulse-modulated inductively coupled plasma;Japanese Journal of Applied Physics;2020-12-29

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