Resolution and total blur: Correlation and focus dependencies in e-beam lithography
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Universal approach for process optimization of chemically amplified photoresists in electron beam lithography;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-05-20
2. Multiple exposure on single blank for electron-beam writer characterization;Photomask Technology 2018;2018-10-03
3. Determination of spot size and acid diffusion length in positive chemically amplified resist for e-beam lithography at 100 and 5 kV;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-11
4. Geometry of nanopore devices fabricated by electron beam lithography: Simulations and experimental comparisons;Microelectronic Engineering;2013-12
5. Influence of high-energy electron irradiation on ultra-low-k characteristics and transistor performance;Alternative Lithographic Technologies V;2013-03-26
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