Computer study of boron segregation at the Si(100)–2×1 and Si(111)–3×3 surfaces-Reference-Cited by-同舟云学术

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Computer study of boron segregation at the Si(100)–2×1 and Si(111)–3×3 surfaces

Published:1999-09 Issue:5 Volume:17 Page:2709-2712
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Zavodinsky V. G.,Kuyanov I. A.,Chukurov E. N.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581934

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Competitive adsorption mechanism of SiHCl3 with BCl3 under a hydrogen atmosphere: Boron impurities introduction into polysilicon;Materials Today Communications;2024-06

2. Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111);Physical Review B;2011-05-03

3. Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111);Journal of Crystal Growth;2011-05

4. Boron ions B+ interaction with Si(100) and Ge(100) surfaces;Vacuum;2009-09

5. FIRST PRINCIPLES STUDY OF BORON SEGREGATION ON THE ${\rm Si}(111)(\sqrt{3} \times \sqrt{3}){\rm R}30^{\circ}$ SURFACE;Surface Review and Letters;2009-04

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