Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor-Reference-Cited by-同舟云学术

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Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor

Published:2004-01 Issue:1 Volume:22 Page:8-12
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim Ju Youn,Seo Sangwon,Kim Do Youl,Jeon Hyeongtag,Kim Yangdo

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1624285

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of conformal TiN thin film with low resistivity and impurity via hollow cathode plasma atomic layer deposition;Journal of Vacuum Science & Technology A;2024-02-29

2. Atomic layer deposition of thin films: from a chemistry perspective;International Journal of Extreme Manufacturing;2023-06-14

3. High-quality SiN_x thin-film growth at 300 °C using atomic layer deposition with hollow-cathode plasma;Journal of Materials Chemistry C;2023

4. Atomistic kinetic Monte Carlo simulation on atomic layer deposition of TiN thin film;Computational Materials Science;2022-10

5. Remote plasma enhanced atomic layer deposition of titanium nitride film using metal organic precursor (C12H23N3Ti) and N2 plasma;Applied Surface Science;2021-03

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