Role of the oxidation conditions on the orientation of TiNxOy grown by atomic layer deposition: Impact on the optical and electrical properties

Abstract

This study delves into the impact of oxidation conditions on the orientation of titanium nitride (TiN) films grown by atomic layer deposition (ALD) and its subsequent effects on optical and electrical properties. Through systematic variations in oxygen exposure during ALD processes, the interplay among titanium, oxygen, and nitrogen is investigated. X-ray diffraction (XRD) analysis reveals distinct modifications in crystallographic orientation, particularly the (111) and (002) preferred orientations, influenced by different oxidation processes. Characterization techniques, including spectroscopic ellipsometry and secondary ion mass spectrometry (SIMS), provide insights into the thickness, refractive index, and chemical composition of the TiN films. Notably, the study observes a correlation between oxygen concentration, crystallographic orientation, and sheet resistance. Samples subjected to integrated oxidation processes exhibit lower (111) texture coefficients, indicating enhanced oxygen incorporation and altered crystalline structures. Conversely, samples with surface oxidation processes display comparable (111) texture coefficients and higher growth per cycle (GPC) values to the reference sample, underscoring the nuanced influence of oxidation timing. The study’s findings offer valuable insights into tailoring the properties of TiN films through controlled oxidation conditions, crucial for optimizing their performance in various applications.