Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films-Reference-Cited by-同舟云学术

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Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films

Published:2019-07 Issue:4 Volume:37 Page:040901
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Hashemi Fatemeh S. M.¹,Cao LiAo²,Mattelaer Felix²,Sajavaara Timo³^ORCID,van Ommen J. Ruud¹^ORCID,Detavernier Christophe²

Affiliation:

1. Department of Chemical Engineering, Delft University of Technology, Delft 2629,The Netherlands

2. Department of Solid State Sciences, Ghent University, Krijgslaan 281 S1, 9000 Gent, Belgium

3. Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyvaskyla, Finland

Funder

M-era.NET

Fonds Wetenschappelijk Onderzoek

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5093402

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition of thin films: from a chemistry perspective;International Journal of Extreme Manufacturing;2023-06-14

2. Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It;ACS Materials Au;2023-04-27

3. Tris(β‐ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors;ChemPlusChem;2023-01

4. Modification of LiMn2O4 surfaces by controlling the Acid–Base surface chemistry of atomic layer deposition;Applied Surface Science;2022-10

5. Structural, Optical, and Electrical Properties of InO_x Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Flexible Device Applications;ACS Applied Electronic Materials;2022-05-27

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