Selective growth of uniform single-layer graphene on Cu foil and fabrication of damage-free field effect transistor combining with direct transfer-Reference-Cited by-同舟云学术

Selective growth of uniform single-layer graphene on Cu foil and fabrication of damage-free field effect transistor combining with direct transfer

Published:2019-07 Issue:4 Volume:37 Page:041207
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Park Seulgi¹^ORCID,Park Hyunjin²,Choi YoungMoon³,Kim Ohyun¹

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, South Korea

2. Advanced Materials Division, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, South Korea

3. Semiconductor R&D Center, Samsung Electronics, 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South Korea

Funder

Samsung

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5109737

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