Design of a shallow thermally stable ohmic contact to p-type InGaSb
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study on the specific contact resistance of evaporated or electroplated golden contacts to n- and p- type InAs epitaxial layers grown by MBE;Materials Science in Semiconductor Processing;2018-07
2. Investigation of polarity effects on the degradation of Pd/Ti/Pt ohmic contacts to p-type SiC under current stress;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11
3. Ohmic contacts with palladium diffusion barrier on III–V semiconductors;Vacuum;2010-05
4. Microwave Performance of $\hbox{InAlAsSb/In}_{0.35} \hbox{Ga}_{0.65}\hbox{Sb/InAlAsSb}$ Double Heterojunction Bipolar Transistors;IEEE Electron Device Letters;2010-04
5. Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
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