Proximity effect correction at 10 keV using ghost and sizing for 0.4 μm mask lithography
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High resolution optical lithography or high throughput electron beam lithography: The technical struggle from the micro to the nano-fabrication evolution;Microelectronic Engineering;2015-02
2. 100 kV ghost electron beam proximity correction on tungsten x-ray masks;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11
3. Address data reduction and lithography performance of graybeam writing strategies for raster scan mask generation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11
4. Feasibility study of new graybeam writing strategies for raster scan mask generation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11
5. Tolerance on alignment error in GHOST proximity effect correction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11
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