Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.580103
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stress Analysis and Junction Leakage of Sub-Melt Laser Annealed SiGe Epitaxial Layers;IEEE Transactions on Semiconductor Manufacturing;2010-11
2. Characterization of Si(100)/HfSiON interface;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
3. Second-harmonic amplitude and phase spectroscopy by use of broad-bandwidth femtosecond pulses;Journal of the Optical Society of America B;2003-12-01
4. High-performance self-aligned SiGeC HBT with selectively grown Si/sub 1-x-yGe/sub x/C/sub y/ base by UHV/CVD;IEEE Transactions on Electron Devices;2003-11
5. Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs;Japanese Journal of Applied Physics;2003-04-30
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