In situ surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar+ ions and Cl radicals
Author:
Affiliation:
1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
2. SCREEN Holdings Co., Ltd., 2-31-22 Yushima, Bunkyo-ku, Tokyo 113-0034, Japan
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/6.0000124
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