Growth of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition at low temperature-Reference-Cited by-同舟云学术

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Growth of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition at low temperature

Published:2000-07 Issue:4 Volume:18 Page:1864-1868
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Choi Young Chul,Bae Dong Jae,Lee Young Hee,Lee Byung Soo,Park Gyeong-Su,Choi Won Bong,Lee Nae Sung,Kim Jong Min

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582437

Cited by 76 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, Electrical, and Optical Properties of Single-Walled Carbon Nanotubes Synthesized through Floating Catalyst Chemical Vapor Deposition;Nanomaterials;2024-06-02

2. Numerical Simulation of Performance Metrics of Dual Metal Gate Carbon Nanotube Field Effect Transistor (DM-CNTFET) for Numerous Sensing Purposes;Materials Today: Proceedings;2023-07

3. Simulation-Based Analysis of Plasma-Assisted Carbon Nanotube Field-Effect Transistor (CNTFET) for Improved Device Metrics and Applications;Springer Proceedings in Materials;2023

4. Exploration of Novel Hafnium Oxide (HfO₂) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications;ECS Journal of Solid State Science and Technology;2022-10-01

5. Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET);Silicon;2022-05-21

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