Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors-Reference-Cited by-同舟云学术

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Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors

Published:2008-09 Issue:5 Volume:26 Page:1178-1181
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim Kyoung-Tae,Kim Gwan-Ha,Woo Jong-Chang,Kim Chang-II

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2960555

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices;ACS Applied Electronic Materials;2021-06-30

2. Silicon-integrated lead-free BaTiO3-based film capacitors with excellent energy storage performance and highly stable irradiation resistance;Journal of Materials Chemistry A;2021

3. Progress and Perspectives on Aurivillius-Type Layered Ferroelectric Oxides in Binary Bi4Ti3O12-BiFeO3 System for Multifunctional Applications;Crystals;2020-12-29

4. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

5. ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION;Journal of Advanced Dielectrics;2011-07

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