Moisture barrier coating of AlN and Al2O3 multilayer film prepared by low-temperature atomic layer deposition

Author:

Saito K.1,Yoshida K.1,Miura M.2,Kanomata K.2,Ahmmad B.1ORCID,Kubota S.1ORCID,Hirose F.1ORCID

Affiliation:

1. Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510, Japan

2. Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510, Japan

Abstract

AlN and Al2O3 multilayer films intended as moisture barriers were deposited on polyethylene naphthalate films by remote-type plasma-enhanced atomic layer deposition. The deposition temperatures for AlN and Al2O3 were 160 and 20 °C, respectively. It was assumed that the AlN and Al2O3 interface would suppress the formation of dislocations and pinholes that lead to moisture diffusion. The AlN top layer was expected to act as a water-resistant layer. The surface morphology and the crystallinity of the deposited film were investigated by atomic force microscopy (AFM) and x-ray diffraction, respectively. The gas barrier property of the multilayer film was determined by the water vapor transmission rate, which was measured as 1.3 × 10−3 g/m2/day at a temperature of 40 °C and a relative humidity (RH) of 90%. The AFM image showed that the AlN top layer remained unchanged during water vapor contact for 120 h at 40 °C and 90% RH. The applicability of the multilayer film as a moisture barrier coating for compound semiconductor devices is discussed.

Funder

Japan Society for the Promotion of Science

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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