Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon-Reference-Cited by-同舟云学术

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Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon

Published:1997-07 Issue:4 Volume:15 Page:1801-1813
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Matsuo P. J.,Kastenmeier B. E. E.,Beulens J. J.,Oehrlein G. S.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580795

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