Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching

Author:

Lin Shih-Po,Ou Chen-Hsien,Lee Szetsen,Tien Yu-Chung,Hsu Chin-Fa

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. DNA Origami for Silicon Patterning;ACS Applied Materials & Interfaces;2020-07-17

2. Plasma Stripping, Cleaning, and Surface Conditioning;Handbook of Silicon Wafer Cleaning Technology;2018

3. Asymmetrical formation of etching residues and their roles in inner-gate-recessed-channel-array-transistor;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03

4. Optical diagnostics of plasma chemistries and chamber conditions in gate oxide stack etch;Materials Science in Semiconductor Processing;2013-04

5. Plasma Stripping, Cleaning, and Surface Conditioning;Handbook of Silicon Wafer Cleaning Technology;2008

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