Limitations on threshold adjustment by backgating in fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors-Reference-Cited by-同舟云学术

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Limitations on threshold adjustment by backgating in fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors

Published:1998-03 Issue:2 Volume:16 Page:838-842
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Tarr N. G.,Wang Y.,Soreefan R.,Snelgrove W. M.,Manning B. M.,Bazarjani S.,MacElwee T. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581069

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of annealing on the structural and surface properties of buried silicon oxide layers synthesized by the SIMOX process;Radiation Effects and Defects in Solids;2011-09

2. Hydrogen Ion Sensing Using Schottky Contacted Silicon Nanowire FETs;IEEE Transactions on Nanotechnology;2008-11

3. Performance enhancement of partially and fully depleted strained-SOI MOSFETs;IEEE Transactions on Electron Devices;2006-05

4. Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor;Japanese Journal of Applied Physics;2006-04-25

5. Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control;Solid-State Electronics;2004-06

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