Energy levels of semiconductor surface vacancies-Reference-Cited by-同舟云学术

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Energy levels of semiconductor surface vacancies

Published:1980-09 Issue:5 Volume:17 Page:1028-1031
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Daw M. S.,Smith D. L.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.570584

Cited by 76 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. XPS analysis of surface chemistry of near surface region of epiready GaAs(100) surface treated with (NH4)2Sx solution;Applied Surface Science;2006-08

2. XPS study of surface chemistry of epiready GaAs(100) surface after (NH4)2Sx passivation;Vacuum;2006-06

3. The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects;Semiconductors;2005

4. Atomic structure of point defects in compound semiconductor surfaces;Current Opinion in Solid State and Materials Science;2001-04

5. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide;Journal of Applied Physics;1999-05-15

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