Low temperature carrier transport mechanism in high-mobility zinc oxynitride thin-film transistors-Reference-Cited by-同舟云学术

Low temperature carrier transport mechanism in high-mobility zinc oxynitride thin-film transistors

Published:2017-05 Issue:3 Volume:35 Page:030602
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Kim Hee-Joong¹,Hong Sae-Young¹,Kim Dae-Hwan¹,Jeong Hwan-Seok¹,Kwon Hyuck-In¹

Affiliation:

1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, South Korea

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4983528

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1. Amorphous oxide semiconductors: From fundamental properties to practical applications;Current Opinion in Solid State and Materials Science;2023-08

2. All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride;Advanced Electronic Materials;2021-03-18

3. Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON;Advanced Electronic Materials;2020-03-03

4. Temperature-Dependent Low-Frequency Noise in Indium–Zinc–Oxide Thin-Film Transistors Down to 10 K;IEEE Transactions on Electron Devices;2019-05

5. Physical properties of reactive RF sputtered a-IZON thin films.;Revista Mexicana de Física;2019-03-26