Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac)2 reactions and enhancement by H2 and Ar plasmas-Reference-Cited by-同舟云学术

Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac)2 reactions and enhancement by H2 and Ar plasmas

Published:2016-09 Issue:5 Volume:34 Page:050603
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Johnson Nicholas R.¹,Sun Huaxing¹,Sharma Kashish¹,George Steven M.²

Affiliation:

1. Department of Chemistry and Biochemistry, University of Colorado at Boulder, Colorado 80309

2. Department of Chemistry and Biochemistry, University of Colorado at Boulder, Colorado 80309 and Department of Mechanical Engineering, University of Colorado at Boulder, Colorado 80309

Funder

Defense Advanced Research Projects Agency (DARPA)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.4959779

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