Ion-induced effects on grain boundaries and a-Si:H tissue quality in microcrystalline silicon films
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.4766193
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2chemistry;Journal of Physics D: Applied Physics;2016-06-21
2. Influence of substrate bias voltage on the microstructure of nc-SiO x :H film;Chinese Physics B;2015-02
3. Plasma–surface interaction during low pressure microcrystalline silicon thin film growth;Journal of Physics D: Applied Physics;2014-05-14
4. Growth mechanisms study of microcrystalline silicon deposited by SiH4/H2 plasma using tailored voltage waveforms;Journal of Applied Physics;2014-02-28
5. Reduced defect density in microcrystalline silicon by hydrogen plasma treatment;Journal of Semiconductors;2013-10
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