InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs);Solid-State Electronics;2009-02
2. Strain relaxation and surface roughness of In[sub x]Al[sub 1−x]As graded buffer layers grown on InP for 6.05 Å applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. Impact ionization in compound semiconductor devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
4. Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-03
5. High performance InP high electron mobility transistors by valved phosphorus cracker;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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