Hydrogen evolution in hydrogenated microcrystalline silicon carbide thin films-Reference-Cited by-同舟云学术

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Hydrogen evolution in hydrogenated microcrystalline silicon carbide thin films

Published:2019-05 Issue:3 Volume:37 Page:031218
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Nemmour Soumia¹,Djoumi Siham¹,Kail Fatiha¹,Roura-Grabulosa Pere²,Roca i Cabarrocas Pere³,Chahed Larbi¹

Affiliation:

1. Laboratoire de Physique des Couches Minces et Matériaux pour l’Electronique, Université Oran1, BP1524, El M’naouar, Oran 31100, Algeria

2. Departament de Física, Universitat de Girona, Politècnica II, Campus Montilivi, Girona 17003, Catalonia, Spain

3. Laboratoire de Physique des Interfaces et des Couches Minces, CNRS, Ecole Polytechnique, Université Paris-Saclay, Palaiseau 91128, France

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5090174

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiOX:H Thin Films;ACS Applied Electronic Materials;2021-04-01

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