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Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates

  • Published:2020-01 Issue:1 Volume:38 Page:013406
  • ISSN:0734-2101
  • Container-title:Journal of Vacuum Science & Technology A
  • language:en
  • Short-container-title:Journal of Vacuum Science & Technology A

Author:

Lim Zheng Hui1,Chrysler Matthew1,Kumar Abinash2,Mauthe Jacob P.3,Kumah Divine P.4,Richardson Chris5,LeBeau James M.2,Ngai Joseph H.1ORCID

Affiliation:

1. Department of Physics, University of Texas-Arlington, Arlington, Texas 76019

2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Massachusetts 02139

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695

4. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695

5. Allied High Tech, Fort Collins, Colorado 80524

Funder

National Science Foundation

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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